Evaluation of H2 Plasma‐Induced Damage in Materials for EUV Lithography

Abstract Ultrafine semiconductor fabrication by lithography has undergone a significant transition from deep ultraviolet (DUV) to extreme ultraviolet (EUV) processes, which presents new challenges. Specifically, the damage caused to components utilized in an EUV system, such as multilayer mirrors, r...

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Bibliographic Details

Published in:	Advanced Materials Interfaces
Main Authors:	Eun‐Seok Choe, Seungwook Choi, Ansoon Kim, Kwan‐Yong Kim, Hee‐Jung Yeom, Min Young Yoon, Seongwan Hong, Dong‐Wook Kim, Jung‐Hyung Kim, Hyo‐Chang Lee
Format:	Article
Language:	English
Published:	Wiley-VCH 2024-03-01
Subjects:	EUV lithography EUV pellicle H2 plasma inductively coupled plasma Mo2C
Online Access:	https://doi.org/10.1002/admi.202300867