Towards wake-up free ferroelectrics and scaling: Al-doped HZO and its crystallographic texture

Ferroelectric (FE) hafnium zirconium oxide (HZO) is an excellent candidate for data storage applications. However, it has some reliability limitations such as imprint and retention. Herein, we explore Al doping of HZO to overcome these limitations. FE behavior is tuned by the aluminum (Al) concentra...

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Bibliographic Details

Published in:	Memories - Materials, Devices, Circuits and Systems
Main Authors:	Ayse Sünbül, David Lehninger, Amir Pourjafar, Shouzhuo Yang, Franz Müller, Ricardo Olivo, Thomas Kämpfe, Konrad Seidel, Lukas Eng, Maximilian Lederer
Format:	Article
Language:	English
Published:	Elsevier 2024-08-01
Subjects:	Ferroelectric Hafnium oxide Crystallographic texture Scaling
Online Access:	http://www.sciencedirect.com/science/article/pii/S2773064624000124