Sb2Te3/MoS2 Van der Waals Junctions with High Thermal Stability and Low Contact Resistance

Abstract Two‐dimensional transition metal dichalcogenides (TMDCs) demonstrate great potential in nanoelectronics devices owing to their high carrier mobility in the atomically thin channel regime. However, high contact resistance between source/drain electrodes and TMDC channels hinders the TMDCs ap...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Naoya Okada, Takahiko Endo, Yasumitsu Miyata, Toshifumi Irisawa
Format:	Article
Language:	English
Published:	Wiley-VCH 2023-04-01
Subjects:	antimony telluride field‐effect transistors molybdenum disulfide transition metal dichalcogenides van der Waals junction
Online Access:	https://doi.org/10.1002/aelm.202201091