Polyacrylonitrile Passivation for Enhancing the Optoelectronic Switching Performance of Halide Perovskite Memristor for Image Boolean Logic Applications

For the CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub>-based optoelectronic memristor, the high ion-migration randomness induces high fluctuation in the resistive switching (RS) parameters. Grain boundaries (GBs) are well known as the ion-migration sites due to their...

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Bibliographic Details
Published in:Nanomaterials
Main Authors: Xiaohan Zhang, Xiaoning Zhao, Zhongqiang Wang
Format: Article
Language:English
Published: MDPI AG 2023-07-01
Subjects:
organic–inorganic halide perovskites
polyacrylonitrile
ion migration
optoelectronic memristor
image Boolean operations
Online Access:https://www.mdpi.com/2079-4991/13/15/2174

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https://www.mdpi.com/2079-4991/13/15/2174

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