Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering

In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featuring large bandgap and excellent thermal stability...

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Bibliographic Details

Published in:	IEEE Journal of the Electron Devices Society
Main Authors:	Hsuan-Han Chen, Ruo-Yin Liao, Wu-Ching Chou, Hsiao-Hsuan Hsu, Chun-Hu Cheng, Ching-Chien Huang
Format:	Article
Language:	English
Published:	IEEE 2022-01-01
Subjects:	Ferroelectric aluminum oxide hafnium zirconium oxide power consumption
Online Access:	https://ieeexplore.ieee.org/document/9917473/