Temperature Characterization of Unipolar-Doped Electroluminescence in Vertical GaN/AlN Heterostructures

An electroluminescence (EL) phenomenon in unipolar-doped GaN/AlN/GaN double-barrier heterostructures—without any p-type contacts—was investigated from 4.2 K to 300 K. In the range of 200–300 K, the extracted peak photon energies agree with the Monemar formula. In the range of 30 to 200 K, the photon...

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Bibliographic Details

Published in:	Energies
Main Authors:	Weidong Zhang, Tyler A. Growden, Paul R. Berger, David F. Storm, David J. Meyer, Elliott R. Brown
Format:	Article
Language:	English
Published:	MDPI AG 2021-10-01
Subjects:	GaN/AlN electroluminescence unipolar holes interband tunneling exciton emission
Online Access:	https://www.mdpi.com/1996-1073/14/20/6654