Electronic transport mechanism and defect states for p-InP/i-InGaAs/n-InP photodiodes

We have studied the defect states and electronic transport mechanisms in the mismatched p-InP/i-InGaAs/n-InP photodiode grown by molecular beam epitaxy (MBE) using deep-level transient spectroscopy (DLTS) and current–voltage (I–V) measurements. Two defect states were observed in the p-InP layer, whi...

Full description

Bibliographic Details

Published in:	Journal of Materials Research and Technology
Main Authors:	Thi Kim Oanh Vu, Minh Tien Tran, Nguyen Xuan Tu, Nguyen Thi Thanh Bao, Eun Kyu Kim
Format:	Article
Language:	English
Published:	Elsevier 2022-07-01
Subjects:	p-InP/i-InGaAs/n-InP photodiode Defect states Electronic transport DLTS MBE
Online Access:	http://www.sciencedirect.com/science/article/pii/S2238785422008894