Single‐Crystal and Polycrystal SiC Bonding for Cost‐effective Chip Fabrication

Abstract High‐quantity single‐crystal silicon carbide (SiC) is widely used in power electronics due to its excellent breakdown electric field strength and high thermal conductivity. However, back grinding during the chip fabrication generally results in ≈70% of single‐crystal SiC being wasted, leadi...

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Bibliographic Details

Published in:	Advanced Materials Interfaces
Main Authors:	Szuyu Huang, Fachen Liu, Jiaxin Liu, Xiaoyue Gao, Zhenzhong Wang, Peng Gao
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-03-01
Subjects:	bonding interface ion beam etching polycrystal silicon carbide single‐crystal silicon carbide
Online Access:	https://doi.org/10.1002/admi.202400816