Mechanism for Local‐Atomic Structure Changes in Chalcogenide‐based Threshold‐Switching Devices

Abstract Threshold‐switching devices based on amorphous chalcogenides are considered for use as selector devices in 3D crossbar memories. However, the fundamental understanding of amorphous chalcogenide is hindered owing to the complexity of the local structures and difficulties in the trap analysis...

Full description

Bibliographic Details

Published in:	Advanced Science
Main Authors:	Minwoo Choi, Ha‐Jun Sung, Bonwon Koo, Jong‐Bong Park, Wooyoung Yang, Youngjae Kang, Yongyoung Park, Yongnam Ham, Dong‐Jin Yun, Dongho Ahn, Kiyeon Yang, Chang Seung Lee
Format:	Article
Language:	English
Published:	Wiley 2024-08-01
Subjects:	amorphous chalcogenide defect analysis local structure threshold switch trap dynamics
Online Access:	https://doi.org/10.1002/advs.202404035