A New Hall Microdevice with Minimal Complexity

A new Hall microdevice with minimal complexity and orthogonal magnetic field activation is suggested. The microsensor contains a rectangular <i>n</i>-type silicon substrate. On the long sides, three ohmic contacts are formed symmetrically and opposite each other. The first two opposite e...

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Bibliographic Details
Published in:Proceedings
Main Authors: Siya Lozanova, Avgust Ivanov, Martin Ralchev, Chavdar Roumenin
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Subjects:
Hall effect
vertical Hall element
orthogonal Hall configuration
sensor characteristics
Online Access:https://www.mdpi.com/2504-3900/97/1/117

Internet

https://www.mdpi.com/2504-3900/97/1/117

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