Sharp Switching by Field-Effect Bandgap Modulation in All-Graphene Side-Gate Transistors

Graphene is a 2-D electronic material that has drawn intensive interest due to its high carrier mobility, film flexibility, and tunable bandgap. The unique bandgap modulation by the transverse electrical field in the graphene nanoribbon (GNR) offers new opportunity to pursue switches with steep subt...

Full description

Bibliographic Details
Published in:IEEE Journal of the Electron Devices Society
Main Authors: Lieh-Ting Tung, Edwin C. Kan
Format: Article
Language:English
Published: IEEE 2015-01-01
Subjects:
Graphene,
nanoribbon
thin-film transistors
bandgap modulation
power gating
Online Access:https://ieeexplore.ieee.org/document/7035031/

Internet

https://ieeexplore.ieee.org/document/7035031/

Similar Items