Driver optimization of high power converter based on BIGT reverse conduction loss
Abstract Bi‐mode Insulated Gate Transistor (BIGT), owing to its notable attributes in power density and compact dimensions, holds promising applications in the realm of high power converters. However, its characteristic of the voltage drop in diode mode controlled by gate‐emitter voltage poses signi...
| Published in: | IET Power Electronics |
|---|---|
| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2024-02-01
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| Subjects: | |
| Online Access: | https://doi.org/10.1049/pel2.12650 |
