Driver optimization of high power converter based on BIGT reverse conduction loss

Abstract Bi‐mode Insulated Gate Transistor (BIGT), owing to its notable attributes in power density and compact dimensions, holds promising applications in the realm of high power converters. However, its characteristic of the voltage drop in diode mode controlled by gate‐emitter voltage poses signi...

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出版年:	IET Power Electronics
主要な著者:	Lei Qi, Ze Li, Xiangyu Zhang, Jin Yang, Yuanfang Lu, Jingfei Wang, Fuyue Wen, Kefeng Wang, Xinyu Hu
フォーマット:	論文
言語:	英語
出版事項:	Wiley 2024-02-01
主題:	HVDC power convertors power convertors power electronics
オンライン･アクセス:	https://doi.org/10.1049/pel2.12650