Improved Performance of HfxZnyO‐Based RRAM and its Switching Characteristics down to 4 K Temperature

Abstract The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way for highly efficient non‐Von Neumann computing architecture. Here, it is reported on an alloying approach using atomic layer deposition for a Zn‐doped HfOx‐based resistive random‐acces...

詳細記述

書誌詳細
出版年:Advanced Electronic Materials
主要な著者: Jun Lan, Zhixiong Li, Zhenjie Chen, Quanzhou Zhu, Wenhui Wang, Muhammad Zaheer, Jiqing Lu, Jinxuan Liang, Mei Shen, Peng Chen, Kai Chen, Guobiao Zhang, Zhongrui Wang, Feichi Zhou, Longyang Lin, Yida Li
フォーマット: 論文
言語:英語
出版事項: Wiley-VCH 2023-03-01
主題:
オンライン・アクセス:https://doi.org/10.1002/aelm.202201250

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