Geometric and electronic structures of monolayer hexagonal boron nitride with multi-vacancy
Abstract Hexagonal boron nitride (h-BN) is an electrical insulator with a large band gap of 5 eV and a good thermal conductor of which melting point reaches about 3000 °C. Due to these properties, much attention was given to the thermal stability rather than the electrical properties of h-BN experim...
| 發表在: | Nano Convergence |
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| Main Authors: | , , , , |
| 格式: | Article |
| 語言: | 英语 |
| 出版: |
SpringerOpen
2017-05-01
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| 主題: | |
| 在線閱讀: | http://link.springer.com/article/10.1186/s40580-017-0107-0 |