Ga<sub>2</sub>O<sub>3</sub>(Sn) Oxides for High-Temperature Gas Sensors

Gallium(III) oxide is a promising functional wide-gap semiconductor for high temperature gas sensors of the resistive type. Doping of Ga<sub>2</sub>O<sub>3</sub> with tin improves material conductivity and leads to the complicated influence on phase content, microstructure, a...

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Bibliographic Details
Published in:Nanomaterials
Main Authors: Nataliya Vorobyeva, Marina Rumyantseva, Vadim Platonov, Darya Filatova, Artem Chizhov, Artem Marikutsa, Ivan Bozhev, Alexander Gaskov
Format: Article
Language:English
Published: MDPI AG 2021-11-01
Subjects:
oxide materials
semiconductor gas sensor
Ga<sub>2</sub>O<sub>3</sub>
doping
carbon monoxide CO
ammonia NH<sub>3</sub>
Online Access:https://www.mdpi.com/2079-4991/11/11/2938

Internet

https://www.mdpi.com/2079-4991/11/11/2938

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