Dislocation-Free SiGe/Si Heterostructures

Ge vertical heterostructures grown on deeply-patterned Si(001) were first obtained in 2012 (C.V. Falub et al., Science2012, 335, 1330–1334), immediately capturing attention due to the appealing possibility of growing micron-sized Ge crystals largely free of thermal stress and hosting dislo...

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Bibliographic Details
Published in:Crystals
Main Authors: Francesco Montalenti, Fabrizio Rovaris, Roberto Bergamaschini, Leo Miglio, Marco Salvalaglio, Giovanni Isella, Fabio Isa, Hans von Känel
Format: Article
Language:English
Published: MDPI AG 2018-06-01
Subjects:
heteroepitaxy
defects
semiconductors
elasticity
plasma-enhanced chemical vapour deposition
Online Access:http://www.mdpi.com/2073-4352/8/6/257

Internet

http://www.mdpi.com/2073-4352/8/6/257

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