A Graphene Geometric Diode with the Highest Asymmetry Ratio and Three States Gate‐Tunable Rectification Ability

Abstract Graphene geometric diodes, with applications in THz detection, energy harvesting, and high‐speed rectification, have been previously constrained by graphene quality and geometry feature size. This study presents significant advancements in graphene geometric diodes by employing the h‐BN/mon...

وصف كامل

التفاصيل البيبلوغرافية
الحاوية / القاعدة:Advanced Electronic Materials
المؤلفون الرئيسيون: Heng Wang, Maolin Chen, Yiming Yang, Yinchang Ma, Linqu Luo, Chen Liu, Igor Getmanov, Thomas D. Anthopoulos, Xixiang Zhang, Atif Shamim
التنسيق: مقال
اللغة:الإنجليزية
منشور في: Wiley-VCH 2024-04-01
الموضوعات:
asymmetry ratio
gate tunability
geometric diode
h‐BN/monolayer graphene/h‐BN heterojunction
responsivity
الوصول للمادة أونلاين:https://doi.org/10.1002/aelm.202300695

الانترنت

https://doi.org/10.1002/aelm.202300695

مواد مشابهة