A Reliability Investigation of VDMOS Transistors: Performance and Degradation Caused by Bias Temperature Stress

This study aimed to comprehensively understand the performance and degradation of both p- and n-channel vertical double diffused MOS (VDMOS) transistors under bias temperature stress. Conducted experimental investigations involved various stress conditions and annealing processes to analyze the impa...

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Bibliographic Details
Published in:Micromachines
Main Authors: Emilija Živanović, Sandra Veljković, Nikola Mitrović, Igor Jovanović, Snežana Djorić-Veljković, Albena Paskaleva, Dencho Spassov, Danijel Danković
Format: Article
Language:English
Published: MDPI AG 2024-04-01
Subjects:
VDMOS
reliability
NBTI
responsible mechanisms
self-heating
Online Access:https://www.mdpi.com/2072-666X/15/4/503

Internet

https://www.mdpi.com/2072-666X/15/4/503

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