Study on the Hydrogen Effect and Interface/Border Traps of a Depletion-Mode AlGaN/GaN High-Electron-Mobility Transistor with a SiN_x Gate Dielectric at Different Temperatures

In this study, the electrical characteristics of depletion-mode AlGaN/GaN high-electron-mobility transistors (HEMTs) with a SiN_x gate dielectric were tested under hydrogen exposure conditions. The experimental results are as follows: (1) After hydrogen treatment at room temper...

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Bibliographic Details

Published in:	Micromachines
Main Authors:	Dongsheng Zhao, Liang He, Lijuan Wu, Qingzhong Xiao, Chang Liu, Yuan Chen, Zhiyuan He, Deqiang Yang, Mingen Lv, Zijun Cheng
Format:	Article
Language:	English
Published:	MDPI AG 2024-01-01
Subjects:	SiN<sub>x</sub> AlGaN/GaN HEMT hydrogen interface trap border trap
Online Access:	https://www.mdpi.com/2072-666X/15/2/171