Record quantum efficiency from strain compensated superlattice GaAs/GaAsP photocathode for spin polarized electron source

Photocathodes based on GaAs and other III–V semiconductors are capable of producing highly spin-polarized electron beams. GaAs/GaAsP superlattice photocathodes exhibit high spin polarization; however, the quantum efficiency (QE) is limited to 1% or less. To increase the QE, we fabricated a GaAs/GaAs...

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Bibliographic Details

Published in:	AIP Advances
Main Authors:	Jyoti Biswas, Luca Cultrera, Wei Liu, Erdong Wang, John Skaritka, Kim Kisslinger, S. D. Hawkins, S. R. Lee, J. F. Klem
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2023-08-01
Online Access:	http://dx.doi.org/10.1063/5.0159183