Cryogenic InP HEMTs With Enhanced <italic>f</italic><sub>max</sub> and Reduced On-Resistance Using Double Recess
Cryogenic InP High-electron-mobility transistors (HEMTs)-based low-noise amplifiers (LNAs) have been applied in deep space exploration, which demands high performance from InP HEMTs. Specifically, at low temperatures, the device needs to achieve low power consumption and high operating frequency. In...
| Published in: | IEEE Journal of the Electron Devices Society |
|---|---|
| Main Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
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| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10948522/ |