Monolayer graphene/GaN heterostructure photodetector with UV-IR dual-wavelength photoresponses

Abstract An ultraviolet-infrared (UV-IR) dual-wavelength photodetector (PD) based on a monolayer (ML) graphene/GaN heterostructure has been successfully fabricated in this work. The ML graphene was synthesized by chemical vapor deposition (CVD) and subsequently transferred onto GaN substrate using p...

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Bibliographic Details
Published in:Frontiers of Optoelectronics
Main Authors: Junjun Xue, Jiaming Tong, Zhujun Gao, Zhouyu Chen, Haoyu Fang, Saisai Wang, Ting Zhi, Jin Wang
Format: Article
Language:English
Published: Springer & Higher Education Press 2024-06-01
Subjects:
Wide bandgap semiconductors
Graphene
Dual-wavelength
Photodetector
Online Access:https://doi.org/10.1007/s12200-024-00121-7

Internet

https://doi.org/10.1007/s12200-024-00121-7

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