Fowler–Nordheim Tunneling in AlGaN MIS Heterostructures with Atomically Thin <i>h</i>-BN Layer Dependence and Performance Limits

Hexagonal Boron Nitride (<i>h</i>-BN) is an exceptional dielectric material with significant potential for high-performance electronic and optoelectronic devices. While previous studies have explored its role in GaN-based MIS (metal/insulator/semiconductor) structures, the influence of f...

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Bibliographic Details

Published in:	Nanomaterials
Main Authors:	Jiarui Zhang, Yikun Li, Shijun Luo, Yan Zhang, Man Luo, Hailu Wang, Chenhui Yu
Format:	Article
Language:	English
Published:	MDPI AG 2025-08-01
Subjects:	few-layer <i>h</i>-BN Fowler–Nordheim tunneling effect AlGaN-based MIS TCAD simulation electrical characteristics
Online Access:	https://www.mdpi.com/2079-4991/15/15/1209