A Transient Bulging Phenomenon in Fast Doping Processes for p-n Junctions

During transient stages, under fast doping processes, the minor-carrier transport can affect the major-carrier counterpart in a peculiar manner. In this study, we have numerically detected occurrences of carrier-concentration bulges, which confine electrons both locally and instantaneously (for seve...

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Bibliographic Details

Published in:	IEEE Access
Main Authors:	Jihong Zhang, Tienmo Shih
Format:	Article
Language:	English
Published:	IEEE 2020-01-01
Subjects:	Fast doping processes carrier-concentration bulges major-carrier majority-carrier
Online Access:	https://ieeexplore.ieee.org/document/9133536/