Ferroelectric HfZrO<sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Ferroelectric-Hf<sub>1-x</sub>Zr<sub>x</sub>O<sub>2</sub> FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (V<sub>T</sub>-shift), which is based on the capacitance matching conce...

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Bibliographic Details
Published in:IEEE Journal of the Electron Devices Society
Main Authors: Kuan-Ting Chen, Siang-Sheng Gu, Zheng-Ying Wang, Chun-Yu Liao, Yu-Chen Chou, Ruo-Chun Hong, Shih-Yao Chen, Hong-Yu Chen, Gao-Yu Siang, Chieh Lo, Pin-Guang Chen, M.-H. Liao, Kai-Shin Li, Shu-Tong Chang, Min-Hung Lee
Format: Article
Language:English
Published: IEEE 2018-01-01
Subjects:
Ferroelectric
negative differential resistance
Online Access:https://ieeexplore.ieee.org/document/8425629/

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https://ieeexplore.ieee.org/document/8425629/

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