APA (7th ed.) Citation

Chen, K., Gu, S., Wang, Z., Liao, C., Chou, Y., Hong, R., . . . Lee, M. (2018, January). Ferroelectric HfZrO<sub>x</sub> FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance). IEEE Journal of the Electron Devices Society.

Chicago Style (17th ed.) Citation

Chen, Kuan-Ting, et al. "Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)." IEEE Journal of the Electron Devices Society Jan. 2018.

MLA (9th ed.) Citation

Chen, Kuan-Ting, et al. "Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)." IEEE Journal of the Electron Devices Society, Jan. 2018.

Warning: These citations may not always be 100% accurate.