Bipolar topological spin diode and topological spin transistor in finite size quantum spin Hall insulators

The miniaturization and stability of electronic devices are becoming increasingly important today. We attempt to provide the theoretical support for designing spintronic devices by numerically investigating spin transport in finite size quantum spin Hall insulators (QSHI) under a perpendicular weak...

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Bibliographic Details

Published in:	New Journal of Physics
Main Authors:	Kun Luo, Xi-Rong Chen
Format:	Article
Language:	English
Published:	IOP Publishing 2024-01-01
Subjects:	bipolar spin diode spin transistor finite size effect quantum spin Hall insulators
Online Access:	https://doi.org/10.1088/1367-2630/ad7528