Bipolar resistive switching in Ag/VO2(B)/SiOx/n++Si RRAM
Non-volatile resistive random-access memory (RRAM) is being promoted as a possible alternative to flash memory, however the optimal material system and sophisticated fabrication techniques hinder its utilization in practical routes. Here, we demonstrate the direct fabrication of metal/oxides/semicon...
| Published in: | Materials Research Express |
|---|---|
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2022-01-01
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| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ac565e |