UV-LED Photo-Activated Room Temperature NO2 Sensors Based on Nanostructured ZnO/AlN Thin Films
UV-light emitting diodes (395–278 nm) were used to investigate the gas sensing attributes of planar and nanostructured ZnO/AlN thin films on Si substrate towards NO<sub>2</sub> at room temperature. A significant increased sensitivity ((<i>R</i>g − <i>R</i>a)/<i...
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2019-02-01
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| Online Access: | https://www.mdpi.com/2504-3900/2/13/888 |
| _version_ | 1850359226435633152 |
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| author | Tony Granz Marius Temming Jiushuai Xu Qomaruddin Cristian Fabrega Nurhalis Majid Gerhard Lilienkamp Winfried Daum Erwin Peiner Joan Daniel Prades Andreas Waag Hutomo Suryo Wasisto |
| author_facet | Tony Granz Marius Temming Jiushuai Xu Qomaruddin Cristian Fabrega Nurhalis Majid Gerhard Lilienkamp Winfried Daum Erwin Peiner Joan Daniel Prades Andreas Waag Hutomo Suryo Wasisto |
| author_sort | Tony Granz |
| collection | DOAJ |
| container_title | Proceedings |
| description | UV-light emitting diodes (395–278 nm) were used to investigate the gas sensing attributes of planar and nanostructured ZnO/AlN thin films on Si substrate towards NO<sub>2</sub> at room temperature. A significant increased sensitivity ((<i>R</i>g − <i>R</i>a)/<i>R</i>a = 65.3 ppm NO<sub>2</sub> in air) and a strong reduction in recovery time (<i>T</i>rec = 14 min) were already observed for the planar ZnO/AlN thin films under UV-B (305 nm) irradiation compared to the other UV wavelengths, while the device showed no obvious response in dark. By enlarging the surface-to-volume ratio of the sensors (i.e., creating nanostructured ZnO/AlN thin films), an increased response time is expected to be observed. |
| format | Article |
| id | doaj-art-5b0f0a2d2a3a4e1da7ca014b2be837f1 |
| institution | Directory of Open Access Journals |
| issn | 2504-3900 |
| language | English |
| publishDate | 2019-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| spelling | doaj-art-5b0f0a2d2a3a4e1da7ca014b2be837f12025-08-19T23:06:03ZengMDPI AGProceedings2504-39002019-02-0121388810.3390/proceedings2130888proceedings2130888UV-LED Photo-Activated Room Temperature NO2 Sensors Based on Nanostructured ZnO/AlN Thin FilmsTony Granz0Marius Temming1Jiushuai Xu2Qomaruddin3Cristian Fabrega4Nurhalis Majid5Gerhard Lilienkamp6Winfried Daum7Erwin Peiner8Joan Daniel Prades9Andreas Waag10Hutomo Suryo Wasisto11Institute of Semiconductor Technology (IHT), TU Braunschweig, 38106 Braunschweig, GermanyInstitute of Semiconductor Technology (IHT), TU Braunschweig, 38106 Braunschweig, GermanyInstitute of Semiconductor Technology (IHT), TU Braunschweig, 38106 Braunschweig, GermanyMIND-IN2UB, Department of Electronic and Biomedical Engineering, University of Barcelona, 08007 Barcelona, SpainMIND-IN2UB, Department of Electronic and Biomedical Engineering, University of Barcelona, 08007 Barcelona, SpainResearch Center for Physics, Indonesian Institute of Sciences (LIPI), Tangerang Selatan 15314, IndonesiaInstitut für Energieforschung und Physikalische Technologien (IEPT), TU Clausthal, 38678 Clausthal, GermanyInstitut für Energieforschung und Physikalische Technologien (IEPT), TU Clausthal, 38678 Clausthal, GermanyInstitute of Semiconductor Technology (IHT), TU Braunschweig, 38106 Braunschweig, GermanyMIND-IN2UB, Department of Electronic and Biomedical Engineering, University of Barcelona, 08007 Barcelona, SpainInstitute of Semiconductor Technology (IHT), TU Braunschweig, 38106 Braunschweig, GermanyInstitute of Semiconductor Technology (IHT), TU Braunschweig, 38106 Braunschweig, GermanyUV-light emitting diodes (395–278 nm) were used to investigate the gas sensing attributes of planar and nanostructured ZnO/AlN thin films on Si substrate towards NO<sub>2</sub> at room temperature. A significant increased sensitivity ((<i>R</i>g − <i>R</i>a)/<i>R</i>a = 65.3 ppm NO<sub>2</sub> in air) and a strong reduction in recovery time (<i>T</i>rec = 14 min) were already observed for the planar ZnO/AlN thin films under UV-B (305 nm) irradiation compared to the other UV wavelengths, while the device showed no obvious response in dark. By enlarging the surface-to-volume ratio of the sensors (i.e., creating nanostructured ZnO/AlN thin films), an increased response time is expected to be observed.https://www.mdpi.com/2504-3900/2/13/888gas sensorZnO nanowirenanostructurephoto-activationAlN-on-SiNO2 detection |
| spellingShingle | Tony Granz Marius Temming Jiushuai Xu Qomaruddin Cristian Fabrega Nurhalis Majid Gerhard Lilienkamp Winfried Daum Erwin Peiner Joan Daniel Prades Andreas Waag Hutomo Suryo Wasisto UV-LED Photo-Activated Room Temperature NO2 Sensors Based on Nanostructured ZnO/AlN Thin Films gas sensor ZnO nanowire nanostructure photo-activation AlN-on-Si NO2 detection |
| title | UV-LED Photo-Activated Room Temperature NO2 Sensors Based on Nanostructured ZnO/AlN Thin Films |
| title_full | UV-LED Photo-Activated Room Temperature NO2 Sensors Based on Nanostructured ZnO/AlN Thin Films |
| title_fullStr | UV-LED Photo-Activated Room Temperature NO2 Sensors Based on Nanostructured ZnO/AlN Thin Films |
| title_full_unstemmed | UV-LED Photo-Activated Room Temperature NO2 Sensors Based on Nanostructured ZnO/AlN Thin Films |
| title_short | UV-LED Photo-Activated Room Temperature NO2 Sensors Based on Nanostructured ZnO/AlN Thin Films |
| title_sort | uv led photo activated room temperature no2 sensors based on nanostructured zno aln thin films |
| topic | gas sensor ZnO nanowire nanostructure photo-activation AlN-on-Si NO2 detection |
| url | https://www.mdpi.com/2504-3900/2/13/888 |
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