Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates

<p>Abstract</p> <p>Multilayers of InGaAs nanostructures are grown on GaAs(210) by molecular beam epitaxy. With reducing the thickness of GaAs interlayer spacer, a transition from InGaAs quantum dashes to arrow-like nanostructures is observed by atomic force microscopy. Photolumines...

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Bibliographic Details

Published in:	Nanoscale Research Letters
Main Authors:	Wang Zhiming, Xie Yanze, Kunets Vasyl, Dorogan Vitaliy, Mazur Yuriy, Salamo Gregory
Format:	Article
Language:	English
Published:	SpringerOpen 2010-01-01
Subjects:	Molecular beam epitaxy InGaAs nanostructures GaAs(210) Lateral ordering
Online Access:	http://dx.doi.org/10.1007/s11671-010-9645-7