Giant tunnelling electroresistance in atomic-scale ferroelectric tunnel junctions

Abstract Ferroelectric tunnel junctions are promising towards high-reliability and low-power non-volatile memories and computing devices. Yet it is challenging to maintain a high tunnelling electroresistance when the ferroelectric layer is thinned down towards atomic scale because of the ferroelectr...

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Bibliographic Details

Published in:	Nature Communications
Main Authors:	Yueyang Jia, Qianqian Yang, Yue-Wen Fang, Yue Lu, Maosong Xie, Jianyong Wei, Jianjun Tian, Linxing Zhang, Rui Yang
Format:	Article
Language:	English
Published:	Nature Portfolio 2024-01-01
Online Access:	https://doi.org/10.1038/s41467-024-44927-7