Micro-Raman Mapping of 3C-SiC Thin Films Grown by Solid–Gas Phase Epitaxy on Si (111)
<p>Abstract</p> <p>A series of 3C-SiC films have been grown by a novel method of solid–gas phase epitaxy and studied by Raman scattering and scanning electron microscopy (SEM). It is shown that during the epitaxial growth in an atmosphere of CO, 3C-SiC films of high cryst...
| 發表在: | Nanoscale Research Letters |
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| Main Authors: | , , , , , |
| 格式: | Article |
| 語言: | 英语 |
| 出版: |
SpringerOpen
2010-01-01
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| 主題: | |
| 在線閱讀: | http://dx.doi.org/10.1007/s11671-010-9670-6 |