T-gate with dual dielectric layer for p-GaN/AlGaN/GaN HFETs: Suppressed gate leakage current and increased gate voltage range

In this paper, a T-shaped gate with a dual dielectric layer is proposed for enhancement-mode p-GaN/AlGaN/GaN heterojunction field-effect transistors (HFETs), designed to reduce gate leakage current and improve gate forward breakdown voltage. The proposed dual dielectric layer, comprising Al2O3 and S...

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Bibliographic Details

Published in:	Results in Physics
Main Authors:	Min-Gi Jeong, Gökhan Atmaca, Ho-Young Cha
Format:	Article
Language:	English
Published:	Elsevier 2025-07-01
Subjects:	Gallium nitride Heterojunction field-effect transistor Gate leakage current Dual dielectric layer
Online Access:	http://www.sciencedirect.com/science/article/pii/S2211379725001883