Resistive switching behaviors of oxygen-rich TaOx films prepared by reactive magnetron sputtering

ABSTRACTIn this work, Ta2O5 films were first deposited on Si substrates by reactive magnetron sputtering of a Ta metal target at various substrate temperatures, RF powers and sputtering pressures. The crystal characteristics of these films can be effectively tailored by controlling the sputtering pr...

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發表在:	Journal of Asian Ceramic Societies
Main Authors:	Ziheng Ding, Jia Tang, Fangren Hu, Wei Zhang
格式:	Article
語言:	英语
出版:	Taylor & Francis Group 2023-07-01
主題:	TaOx films different oxygen concentration magnetron sputtering bipolar switching RS mechanism
在線閱讀:	https://www.tandfonline.com/doi/10.1080/21870764.2023.2216563