Effect of High-Temperature Storage on Electrical Characteristics of Hydrogen-Treated AlGaN/GaN High-Electron-Mobility Transistors

In this paper, high-temperature storage of hydrogen-treated AlGaN/GaN HEMTs is conducted for the first time to study the effect of high temperature on the electrical characteristics of the devices after hydrogen treatment, and it is found that high-temperature storage can effectively reduce the impa...

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Bibliographic Details

Published in:	Micromachines
Main Authors:	Bin Zhou, Chang Liu, Chenrun Guo, Xianghong Hu, Xiaodong Jian, Hongyue Wang, Xiaofeng Yang
Format:	Article
Language:	English
Published:	MDPI AG 2024-04-01
Subjects:	AlGaN/GaN HEMT hydrogen high-temperature storage
Online Access:	https://www.mdpi.com/2072-666X/15/5/611