Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation

In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed from conventional mesa isolation. This usually requires a careful mesa etch process to procure an anisotropic mesa-wall profile. A...

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Bibliographic Details

Published in:	Micromachines
Main Authors:	Moath Alathbah, Khaled Elgaid
Format:	Article
Language:	English
Published:	MDPI AG 2022-11-01
Subjects:	AlGaN/GaN HEMTs device isolation AlGaN/AlN/GaN HEMTs planar gatefeed gate leakage HEMT mesa etch
Online Access:	https://www.mdpi.com/2072-666X/13/11/2007