Ferroelectric Compensation Effect of the Hard Electrode for the HfO2‐ZrO2 Superlattice Films at the Low‐Annealing Temperature

Abstract This study investigates the ferroelectric (FE) performance of [HfO2/ZrO2]6 superlattice FE capacitors using different top electrodes (TE). The unidirectional rapid thermal annealing (RTA) process from 450 to 600 °C is conducted. The device's remanent polarization (Pr) improved with TE...

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Bibliographic Details
Published in:Advanced Electronic Materials
Main Authors: Chuqian Zhu, Na Bai, Yufan Wang, Huajun Sun, Lanqing Zou, Yunhui Yi, Jiyang Xu, Jiawang Ren, Junming Zhang, Sheng Hu, Kanhao Xue, Lei Ye, Weiming Cheng, Qiang He, Xiangshui Miao
Format: Article
Language:English
Published: Wiley-VCH 2025-08-01
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Online Access:https://doi.org/10.1002/aelm.202400830