Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications

An analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 °C and 125 °C. Both temperatures reduce the 2DEG density by 4 &#x...

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Bibliographic Details
Published in:IEEE Access
Main Authors: Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Norhawati Ahmad, Muammar Mohamad Isa, Alhan Farhanah Abd Rahim, Khaled Ahmeda
Format: Article
Language:English
Published: IEEE 2024-01-01
Subjects:
AlGaN
GaN
MOSHEMT
2DEG
wide-bandgap
semiconductor device
Online Access:https://ieeexplore.ieee.org/document/10460543/

Internet

https://ieeexplore.ieee.org/document/10460543/

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