A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures

Abstract Binary oxide ferroelectrics like doped HfO2, compatible with complementary metal‐oxide‐semiconductor (CMOS) platforms, have gained significant interest for energy efficient, scalable, high‐performance non‐volatile memory and neuromorphic technologies. However, there is no single model for d...

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Bibliographic Details

Published in:	Advanced Electronic Materials
Main Authors:	Ella Paasio, Rikhard Ranta, Sayani Majumdar
Format:	Article
Language:	English
Published:	Wiley-VCH 2025-06-01
Subjects:	analog memory ferroelectric capacitors ferroelectric Hf0.5Zr0.5O2 Jiles‐Atherton model neuromorphic non‐volatile memory
Online Access:	https://doi.org/10.1002/aelm.202400840