A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars

In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance. However, SJ MOSFET will turn on the parasitic diodes due to fast reverse recovery, further inducing severe oscillation in the reverse recovery of...

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Bibliographic Details

Published in:	Crystals
Main Authors:	Rongyu Gao, Hongyu Cheng, Wenmao Li, Chenkai Deng, Jianguo Chen, Qing Wang, Hongyu Yu
Format:	Article
Language:	English
Published:	MDPI AG 2022-06-01
Subjects:	superjunction power MOSFET reverse recovery Schottky contact 3C-SiC pillar
Online Access:	https://www.mdpi.com/2073-4352/12/7/916