Diode-Like Current Leakage and Ferroelectric Switching in Silicon SIS Structures with Hafnia-Alumina Nanolaminates

Silicon semiconductor-insulator-semiconductor (SIS) structures with high-k dielectrics are a promising new material for photonic and CMOS integrations. The “diode-like” currents through the symmetric atomic layer deposited (ALD) HfO₂/Al₂O<sub>3<...

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Bibliographic Details

Published in:	Nanomaterials
Main Authors:	Vladimir P. Popov, Fedor V. Tikhonenko, Valentin A. Antonov, Ida E. Tyschenko, Andrey V. Miakonkikh, Sergey G. Simakin, Konstantin V. Rudenko
Format:	Article
Language:	English
Published:	MDPI AG 2021-01-01
Subjects:	SIS structures silicon-on-ferroelectric diode and FET characteristics leakage mechanisms ferroelectric hysteresis
Online Access:	https://www.mdpi.com/2079-4991/11/2/291