Atomic diffusion and electrical reliability of NiAl/SiO2 interconnect: Breakdown voltage and TDDB characteristics

This study reports the effects of post-annealing on the electrical reliability of a NiAl/SiO2 interconnect structure for potential use as post-Cu interconnect. Our materials characterization using transmission electron microscopy and secondary ion mass spectrometry discloses that annealing at elevat...

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Bibliographic Details

Published in:	Journal of Materials Research and Technology
Main Authors:	Kyeong-Youn Song, Seungjun Na, Byoung-Joon Kim, Hoo-Jeong Lee
Format:	Article
Language:	English
Published:	Elsevier 2024-05-01
Subjects:	NiAl Reliability Annealing Interconnects TDDB
Online Access:	http://www.sciencedirect.com/science/article/pii/S223878542401192X