Parametric Modeling and Analysis of High Power IGBT Device
In the high-power IGBT module commutation circuit, under the combined impact of stray inductance and d<italic>i</italic>/d<italic>t</italic>, the IGBT is under significant voltage and current stresses during the processes of switching on and off, which increases system losses...
| 出版年: | Kongzhi Yu Xinxi Jishu |
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| 主要な著者: | , |
| フォーマット: | 論文 |
| 言語: | 中国語 |
| 出版事項: |
Editorial Office of Control and Information Technology
2023-08-01
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| 主題: | |
| オンライン･アクセス: | http://ctet.csrzic.com/thesisDetails#10.13889/j.issn.2096-5427.2023.04.006 |