Study of Short Channel Effects in n-FinFET Structure for Si, GaAs, GaSb and GaN Channel Materials

In this paper a study of various short channel effects (SCE’s) of double gate n-FinFET structure as a function of scaling parameters for Si, GaAs, GaSb and GaN channel materials has been evaluated and presented. The simulation results presented are based on the self consistent solution of Poisson an...

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Bibliographic Details

Published in:	Журнал нано- та електронної фізики
Main Authors:	Tawseef A. Bhat, M. Mustafa, M.R. Beigh
Format:	Article
Language:	English
Published:	Sumy State University 2015-10-01
Subjects:	SCE DIBL SS Threshold voltage FinFET ITR
Online Access:	http://jnep.sumdu.edu.ua/download/numbers/2015/3/articles/jnep_2015_V7_03010.pdf