Compact GaN HEMT Power Amplifier MMIC Delivering Over 40 W for Ku-Band Applications

This paper presents the design and implementation of a high-power amplifier (HPA) using a 250-nm gallium nitride (GaN) high electron mobility transistor (HEMT) process on a silicon carbide substrate. The HPA is engineered to optimize both output power and power density relative to chip size. The 1st...

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發表在:	IEEE Access
Main Authors:	Yeongmin Jang, Wonseok Choe, Minchul Kim, Youngwan Lee, Jinho Jeong
格式:	Article
語言:	英语
出版:	IEEE 2024-01-01
主題:	GaN HEMT output power power amplifier power combining power density
在線閱讀:	https://ieeexplore.ieee.org/document/10771749/