Improving endurance and reliability by optimizing the alternating voltage in Pt/ZnO/TiN RRAM

As the demand for neuromorphic computing technology increases, the need for high-density resistive random access memory (RRAM) to meet data capacity expansion increases. Operating voltages in the DC measurement environment and their impact on RRAM readout process stability and reliability have been...

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Bibliographic Details

Published in:	Results in Physics
Main Authors:	Jongmin Park, Sungjun Kim
Format:	Article
Language:	English
Published:	Elsevier 2022-08-01
Subjects:	RRAM Valence change memory Optimization Readout process Endurance Reliability
Online Access:	http://www.sciencedirect.com/science/article/pii/S2211379722004053