A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

We propose a novel silicon carbide (SiC) self-aligned N-type ion implanted trench MOSFET (NITMOS) device. The maximum electric field in the gate oxide could be effectively reduced to below 3 MV/cm with the introduction of the P-epi layer below the trench. The P-epi layer is partially counter-doped b...

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Bibliographic Details

Published in:	Micromachines
Main Authors:	Baozhu Wang, Hongyi Xu, Na Ren, Hengyu Wang, Kai Huang, Kuang Sheng
Format:	Article
Language:	English
Published:	MDPI AG 2023-12-01
Subjects:	silicon carbide (SiC) trench MOSFET self-aligned P-epi layer oxide protection
Online Access:	https://www.mdpi.com/2072-666X/14/12/2212