Analysis and Hardening of SEGR in Trench VDMOS with Termination Structure

Single-event gate-rupture (SEGR) in the trench vertical double-diffused power MOSFET (VDMOS) occurs at a critical bias voltage during heavy-ion experiments. Fault analysis demonstrates that the hot spot is located at the termination of the VDMOS, and the gate oxide in the termination region has been...

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Bibliographic Details

Published in:	Micromachines
Main Authors:	Yuan Wang, Tao Liu, Lingli Qian, Hao Wu, Yiren Yu, Jingyu Tao, Zijun Cheng, Shengdong Hu
Format:	Article
Language:	English
Published:	MDPI AG 2023-03-01
Subjects:	single-event gate-rupture (SEGR) heavy ion trench VDMOS radiation hardness
Online Access:	https://www.mdpi.com/2072-666X/14/3/688