Robust luminescence of the silicon-vacancy center in diamond at high temperatures

We performed high-temperature luminescence studies of silicon-vacancy color centers obtained by ion implantation in single crystal diamond. We observed reduction of the integrated fluorescence upon increasing temperature, ascribable to a transition channel with an activation energy of 180 meV that p...

Full description

Bibliographic Details

Published in:	AIP Advances
Main Authors:	Stefano Lagomarsino, Federico Gorelli, Mario Santoro, Nicole Fabbri, Ahmed Hajeb, Silvio Sciortino, Lara Palla, Caroline Czelusniak, Mirko Massi, Francesco Taccetti, Lorenzo Giuntini, Nicla Gelli, Dmitry Yu Fedyanin, Francesco Saverio Cataliotti, Costanza Toninelli, Mario Agio
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2015-12-01
Online Access:	http://dx.doi.org/10.1063/1.4938256